issue 3 - january 2006 1 www.zetex.com ? zetex semiconductors plc 2006 zxtp2025f 50v, sot23, pnp medium power transistor summary v (br)ceo > -50v i c(cont) = -5a r ce(sat) = 30m typical v ce(sat) < - 60mv @ -1a p d = 1.2w complementary part number: zxtn2031f description advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. the compact size and ratings of this device make it ideally suited to applications where space is at a premium. features ? higher power dissipation sot23 package high peak current low saturation voltage high gain 50v forward blocking voltage applications mosfet and igbt gate driving motor drive relay, lamp and solenoid drive high side switches dc-dc converters ordering information device marking 312 device reel size (inches) tape width (mm) quantity per reel ZXTP2025FTA 7 8 3,000 pinout - top view
zxtp2025f issue 3 - january 2006 2 www.zetex.com ? zetex semiconductors plc 2006 absolute maximum ratings thermal resistance parameter symbol limit unit collector-base voltage v cbo -50 v collector-emitter voltage v ceo -50 v emitter-base voltage v ebo -7.0 v peak pulse current i cm -10 a continuous collector current (c) i c -5 a base current i b -1.2 a power dissipation @ t a =25c (a) linear derating factor p d 1.0 8.0 w mw/c power dissipation @ t a =25c (b) linear derating factor p d 1.2 9.6 w mw/c power dissipation @ t a =25c (c) linear derating factor p d 1.56 12.5 w mw/c operating and storage temperature t j :t stg -55 to +150 c parameter symbol value unit junction to ambient (a) notes: (a) mounted on 18mm x 18mm x 1.6mm fr4 pcb with a very high coverage of 2 oz weight copper in still air conditions. r ja 125 c/w junction to ambient (b) (b) mounted on 30mm x 30mm x 1.6mm fr4 pcb with a very high coverage of 2 oz weight copper in still air conditions. r ja 104 c/w junction to ambient (c) (c) as (b) above measured at t<5secs. r ja 80 c/w
zxtp2025f issue 3 - january 2006 3 www.zetex.com ? zetex semiconductors plc 2006 characteristics
zxtp2025f issue 3 - january 2006 4 www.zetex.com ? zetex semiconductors plc 2006 electrical characteristics (at t amb = 25c unless otherwise stated) parameter symbol min. typ. max. unit conditions collector-base breakdown voltage v (br)cbo -50 100 v i c =-100 a collector-emitter breakdown voltage v (br)ceo -50 70 v i c =-10ma (a) notes: (a) measured under pulsed conditions. pulse width=300 s. duty cycle 2%. emitter-base breakdown voltage v (br)ebo -7.0 8.5 v i e =-100 a collector-emitter cut-off current i cev -20 na v ce =-40v, v be = 1v collector-base cut-off current i cbo -20 na v cb =-40v emitter-base cut-off current i ebo -10 na v eb =-6v static forward current transfer ratio h fe 180 200 70 12 380 350 120 30 560 i c =-10ma, v ce =-2v (a) i c =-500ma, v ce =-2v (a) ic=-5a, v ce =-2v (a) ic=-10a, v ce =-2v (a) collector-emitter saturation voltage v ce(sat) -11 -40 -150 -150 -20 -60 -230 -200 mv mv mv mv i c =-100ma, i b =-10ma (a) i c =-1a, i b =-100ma (a) i c =-2a, i b =-40ma (a) i c =-5a, i b =-500ma (a) base-emitter saturation voltage v be(sat) -0.81 -0.95 -0.88 -1.05 v v i c =-2a, i b =-40ma (a) i c =-5a, i b =-500ma (a) base-emitter turn-on voltage v be(on) -0.82 -0.92 v i c =-5a, v ce =-2v (a) transition frequency f t 190 mhz ic=-500ma, v ce =-10v, f=50mhz output capacitance c obo 42 pf v cb =-10v, f=1mhz delay time t (d) 14 ns rise time t (r) 23 ns v cc =-12v, i c =-2.5a, storage time t (stg) 240 ns i b1 =i b2 =-125ma fall time t (f) 30 ns
zxtp2025f issue 3 - january 2006 5 www.zetex.com ? zetex semiconductors plc 2006 typical characteristics
zxtp2025f issue 3 - january 2006 6 www.zetex.com ? zetex semiconductors plc 2006 for international sales offices visit www.zetex.com/offices zetex products are distributed worldwide. for details, see www.zetex.com/salesnetwork this publication is issued to provide outline information only whic h (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. the company reserves the right to alter without notice the specif ication, design, price or conditions of supply of any product or service. europe zetex gmbh streitfeldstra?e 19 d-81673 mnchen germany telefon: (49) 89 45 49 49 0 fax: (49) 89 45 49 49 49 europe.sales@zetex.com americas zetex inc 700 veterans memorial highway hauppauge, ny 11788 usa telephone: (1) 631 360 2222 fax: (1) 631 360 8222 usa.sales@zetex.com asia pacific zetex (asia ltd) 3701-04 metroplaza tower 1 hing fong road, kwai fong hong kong telephone: (852) 26100 611 fax: (852) 24250 494 asia.sales@zetex.com corporate headquarters zetex semiconductors plc zetex technology park, chadderton oldham, ol9 9ll united kingdom telephone: (44) 161 622 4444 fax: (44) 161 622 4446 hq@zetex.com packaging details - sot23 note: controlling dimensions are in millimeters. ap proximate dimensions are provided in inches dim. millimeters inches dim. millimeters inches min. max. min. max. min. max. max. max. a 2.67 3.05 0.105 0.120 h 0.33 0.51 0.013 0.020 b 1.20 1.40 0.047 0.055 k 0.01 0.10 0.0004 0.004 c - 1.10 - 0.043 l 2.10 2.50 0.083 0.0985 d 0.37 0.53 0.015 0.021 m 0.45 0.64 0.018 0.025 f 0.085 0.15 0.0034 0.0059 n 0.95 nom 0.0375 nom g 1.90 nom 0.075 nom - - - - - l n h g a c f b m k d 3 leads
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